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ICE3AS02G bảng dữ liệu(PDF) 19 Page - Infineon Technologies AG

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ICE3AS02G bảng dữ liệu(HTML) 19 Page - Infineon Technologies AG

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ICE3AS02 / ICE3AS02G / ICE3BS02 / ICE3BS02G
Electrical Characteristics
Version 1.2
19
02 Sep 2005
Note:
The trend of all the voltage levels in the Control Unit is the same regarding the deviation except VVCCOVP and VVCCPD
4.3.6
Current Limiting
Active Burst Mode Level for
Comparator C6b
VFBC6b
3.25
3.40
3.55
V
After Active Burst Mode
is entered
Overvoltage Detection Limit
VVCCOVP
16.1
17.1
18.1
V
VFB > 5V
VSoftS < 4.0V
Thermal Shutdown1)
TjSD
130
140
150
°C
Spike Blanking
tSpike
-8.0
-
µs
1)
The parameter is not subjected to production test - verified by design/characterization
Parameter
Symbol
Limit Values
Unit
Test Condition
min.
typ.
max.
Peak Current Limitation
(incl. Propagation Delay Time of
external MOS)
Vcsth
0.97
1.02
1.07
V
dVsense / dt = 0.6V/µs
(see Figure 14)
Peak Current Limitation during
Active Burst Mode
VCS2
0.232
0.257
0.282
V
Leading Edge Blanking
tLEB
-
220
-
ns
VSoftS = 4.4V
CS Input Bias Current
ICSbias
-1.0
-0.2
0
µA
VCS =0V
Parameter
Symbol
Limit Values
Unit
Test Condition
min.
typ.
max.



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