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SSR1008M bảng dữ liệu(PDF) 1 Page - Solid States Devices, Inc |
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SSR1008M bảng dữ liệu(HTML) 1 Page - Solid States Devices, Inc |
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1 / 2 page ![]() NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RS0205L DOC Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com Designer’s Data Sheet Part Number/Ordering Information 1/ SSR1008 SSR1009 SSR1010 __ __ __ __ __ __ __ __ __ │ │ │ │ │ │ │ │ │ │ └ │ │ │ │ │ │ └ └ Screening 2/ __ = Not Screened TX = TX Level TXV = TXV Level S = S Level Lead Options __ = Straight Leads DB = Bent Down UB = Bent Up Package M = TO-254 Z = TO-254Z SSR1008M, SSR1008Z SSR1009M, SSR1009Z SSR1010M, SSR1010Z 10 AMPS 80 - 100 VOLTS SCHOTTKY RECTIFIER FEATURES: • Extremely Low Forward Voltage Drop • Low Reverse Leakage Current • Hermetically Sealed Package • Guard Ring for Overvoltage Protection • Eutectic Die Attach • 175°C Operating Junction Temperature • TX, TXV, or Space Level Screening Available MAXIMUM RATINGS RATING SYMBOL VALUE UNIT Peak Repetitive Reverse Voltage and DC Blocking Voltage SSR1008 SSR1009 SSR1010 VRRM VRWM VR 80 90 100 Volts Average Rectified Output Current 3/ (Resistive Load, 60Hz, Sine Wave, TA=25 °C) IO 10 Amps Peak Surge Current 3/ (8.3 ms Pulse, Half Sine Wave, superimposed on IO, allow junction to reach equilibrium between pulses, TA=25 °C) IFSM 200 Amps Operating and Storage Temperature TOP & TSTG -65 to +175 °C Maximum Thermal Resistance 3/ Junction to Case RθJC 2.0 °C/W NOTES: 1/ For ordering information, price, and availability- Contact Factory. 2/ Screening based on MIL-PRF-19500. Screening flows available on request. 3/ For optimal performance, connect leads 2 & 3 together. TO-254 TO-254Z |
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Mô tả tương tự - SSR1008M |
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