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LTC4441 bảng dữ liệu(PDF) 3 Page - Linear Technology

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LTC4441 bảng dữ liệu(HTML) 3 Page - Linear Technology

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LTC1154
3
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ELECTRICAL CHARACTERISTICS
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
VINL
Input Low Voltage
l
0.8
V
IIN
Input Current
0V < VIN < VS
l
±1
μA
CIN
Input Capacitance
5pF
VENH
ENABLE Input High Voltage
l
3.5
2.6
V
VENL
ENABLE Input Low Voltage
l
1
0.6
V
IEN
ENABLE Input Current
0V < VIN < VS
l
±1
μA
VSDH
Shutdown Input High Voltage
l
2V
VSDL
Shutdown Input Low Voltage
l
0.8
V
ISD
Shutdown Input Current
0V < VIN < VS
l
±1
μA
VSEN
Drain Sense Threshold Voltage
l
80
75
100
100
120
125
mV
mV
ISEN
Drain Sense Input Current
0V < VSEN < VS
l
±0.1
μA
VGATE – VS
Gate Voltage Above Supply
VS = 5V
VS = 6V
VS = 12V
l
l
l
6
7.5
15
7
8.3
18
9
15
25
V
V
V
VSTAT
Status Output Low Voltage
ISTAT = 400μA
l
0.05
0.4
V
ISTAT
Status Output Leakage Current
VSTAT = 12V
l
1μA
tON
Turn-ON Time
VS = 5V, CGATE = 1000pF
Time for VGATE > VS + 2V
Time for VGATE > VS + 5V
30
100
110
450
300
1000
μs
μs
VS = 12V, CGATE = 1000pF
Time for VGATE > VS + 5V
Time for VGATE > VS + 10V
20
50
80
160
200
500
μs
μs
tOFF
Turn-OFF Time
VS = 5V, CGATE = 1000pF, Time for VGATE < 1V
10
36
60
μs
VS = 12V, CGATE = 1000pF, Time for VGATE < 1V
10
28
60
μs
tSC
Short-Circuit Turn-OFF Time
VS = 5V, CGATE = 1000pF, Time for VGATE < 1V
5
25
40
μs
VS = 12V, CGATE = 1000pF, Time for VGATE < 1V
5
23
40
μs
tSD
Shutdown Turn-OFF Time
VS = 5V, CGATE = 1000pF, Time for VGATE < 1V
17
40
μs
VS = 12V, CGATE = 1000pF, Time for VGATE < 1V
13
35
μs
The
l denotes the specifications which apply over the full operating
temperature range, otherwise specifications are at TA = 25°C. VS = 4.5V to 18V, TA = 25°C, VEN = 0V, VSD = 0V unless otherwise noted.



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