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other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.

FEATURES 

EXCELLENT THERMAL TRACKING  ≤ 15µV/°C 

ABSOLUTE MAXIMUM RATINGS 

@ 25°C (unless otherwise noted) 

Maximum Temperatures 

Storage Temperature ‐65°C to +150°C 

Operating Junction Temperature ‐55°C to +150°C 

Maximum Power Dissipation 

Continuous Power Dissipation  

TBD 

Maximum Currents 

Collector Current 

10mA 

Maximum Voltages 

Collector to Collector Voltage 

80V 

  

MATCHING CHARACTERISTICS @ 25°C (unless otherwise stated) 

SYMBOL 

CHARACTERISTIC 

MIN 

TYP 

MAX 

UNITS 

CONDITIONS 

Base Emitter Voltage Differential 

‐‐ 

‐‐ 

10 

mV 

 

Base Emitter Voltage Differential 

Change with Temperature 

‐‐ 

‐‐ 

15 

µV/°C 

Base Current Differential 

‐‐ 

‐‐ 

10 

nA 

Base Current Differential 

 Change with Temperature 

‐‐ 

‐‐ 

1.0 

nA/°C 

TA = ‐40°C to +85°C 

DC Current Gain Differential 

‐‐ 

‐‐ 

15 

% 

 

ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)

SYMBOL 

CHARACTERISTICS 

MIN. 

TYP. 

MAX. 

UNITS 

CONDITIONS 

Collector to Base Voltage ‐20 

‐‐ 

‐‐ 

V 

IC = 10µA, IE = 0 

Collector to Emitter Voltage ‐20 

‐‐ 

‐‐ 

V 

Emitter‐Base Breakdown Voltage ‐6.2 

‐‐ 

‐‐ 

V 

Collector to Collector Voltage ‐80 

‐‐ 

‐‐ 

V 

 

 

DC Current Gain 

50 

‐‐ 

‐‐ 

 

40 

‐‐ 

‐‐ 

 

40 

‐‐ 

‐‐ 

 

Collector Saturation Voltage 

‐‐ 

‐‐ 

‐1.2 

V 

Emitter Cutoff Current 

‐‐ 

‐‐ 

‐0.2 

nA 

Collector Cutoff Current 

‐‐ 

‐‐ 

‐0.2 

nA 

Output Capacitance 

‐‐ 

‐‐ 

2 

pF 

Collector to Collector Capacitance 

‐‐ 

‐‐ 

2 

pF 

Collector to Collector Leakage Current 

‐‐ 

‐‐ 

‐1 

nA 

Current Gain Bandwidth 

Product(Current) 

‐‐ 

‐‐ 

600 

MHz 

NF 

Narrow Band Noise Figure 

‐‐ 

‐‐ 

3 

dB 

f = 1KHz 

Notes: 

1. Absolute Maximum ratings are limiting values above which serviceability may be impaired

2. The reverse base‐to‐emitter voltage must never exceed 6.2 volts; the reverse base‐to‐emitter current must never exceed 10µA. 

 

 

 

 

LS3550C

MONOLITHIC DUAL

PNP TRANSISTOR

LS3550C Features:

Tight matching

Low Output Capacitance

The LS3550C is a monolithic pair of PNP transistors

mounted in a single P-DIP package. The monolithic

dual chip design reduces parasitics and gives better

performance while ensuring extremely tight matching.

The 8 Pin P-DIP provides ease of manufacturing, and

the symmetrical pinout prevents improper orientation.

(See Packaging Information).

Linear Systems Monolithic Dual PNP Transistor

Available Packages:

LS3550C in P-DIP

LS3550C available as bare die

Please contact Micross for full package and die dimensions:

P-DIP (Top View)