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STK6103 bảng dữ liệu(PDF) 9 Page - Sanyo Semicon Device

tên linh kiện STK6103
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STK6103 bảng dữ liệu(HTML) 9 Page - Sanyo Semicon Device

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STK6103
No. 4290- 9/11
Fig.6 Starting Current
Fig.7 Conversion Circuit for Hall IC and Hall Device Signal
Fig.8
Thermal Radiation Design
(1)
Internal average power dissipation Pd
The driver transistors represent the majority of the power dissipation in operation. Other losses are V
CC2 and
the charge pump circuit. In PWM drive in particular, the diode in the V
CC1 transistor is being used as a
flywheel diode, increasing V
CC1 transistor loss. When these are included, internal mean power dissipation is:
Pd = Io (Vst
1 + VFd2 + Vst2d1) + PdA + PdB + PdC ······················· Œ
Io
: Motor current
Vst
1 : VCC1 transistor saturation voltage
Vst
2 : GND transistor saturation voltage
d
1
: GND transistor PWM operation on duty
d
2
: GND transistor PWM operation off duty
Pd
A
: V
CC2 loss
Pd
B
: Charge pump circuit loss
Pd
C
: GND transistor switching loss
V
F
: V
CC1 transistor internal diode normal direction voltage
Because the driver transistor is a MOSFET, Vst
1 and Vst2 will increase with an increase in IO or substrate
temperature Tc.
Pd
A and PdB are generally given as:
Pd
A ≈ VCC2 x ICCO1 ········································································ 
Pd
B ≈ VCC1 x (0.49VCC1 – 4.2) x 0.001········································ Ž
where, V
CC1 = 16 to 42V
Refer to Figs. 11 to 14 for data on Vst
1, Vst2, d1 and VF.



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