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STK6103 bảng dữ liệu(PDF) 9 Page - Sanyo Semicon Device |
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STK6103 bảng dữ liệu(HTML) 9 Page - Sanyo Semicon Device |
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9 / 11 page ![]() STK6103 No. 4290- 9/11 Fig.6 Starting Current Fig.7 Conversion Circuit for Hall IC and Hall Device Signal Fig.8 Thermal Radiation Design (1) Internal average power dissipation Pd The driver transistors represent the majority of the power dissipation in operation. Other losses are V CC2 and the charge pump circuit. In PWM drive in particular, the diode in the V CC1 transistor is being used as a flywheel diode, increasing V CC1 transistor loss. When these are included, internal mean power dissipation is: Pd = Io (Vst 1 + VFd2 + Vst2d1) + PdA + PdB + PdC ······················· Io : Motor current Vst 1 : VCC1 transistor saturation voltage Vst 2 : GND transistor saturation voltage d 1 : GND transistor PWM operation on duty d 2 : GND transistor PWM operation off duty Pd A : V CC2 loss Pd B : Charge pump circuit loss Pd C : GND transistor switching loss V F : V CC1 transistor internal diode normal direction voltage Because the driver transistor is a MOSFET, Vst 1 and Vst2 will increase with an increase in IO or substrate temperature Tc. Pd A and PdB are generally given as: Pd A ≈ VCC2 x ICCO1 ········································································ Pd B ≈ VCC1 x (0.49VCC1 – 4.2) x 0.001········································ where, V CC1 = 16 to 42V Refer to Figs. 11 to 14 for data on Vst 1, Vst2, d1 and VF. |
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