2N5015 datasheet(2/2 Pages) SSDI

2 / 2 page

NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: TR0043E

DOC

Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, CA 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

2N5015

Case Outline: TO-39

PIN 1: EMITTER

PIN 2: BASE

PIN 3: COLLECTOR

Case Outline: TO-5

PIN 1: EMITTER

PIN 2: BASE

PIN 3: COLLECTOR

Electrical Characteristic

Symbol

Min

Typ

Max

Units

Collector – Emitter Breakdown Voltage

(IC = 200 µADC, RBE = 1 KΩ)

BVCER

1000

1300

––

Collector–Base Breakdown Voltage

(IC = 200 µADC)

BVCBO

1000

––

Emitter–Base Breakdown Voltage

(IE = 50 µADC)

BVEBO

––

Collector Cutoff Current (VCB = 760 V)

(VCB = 760 V, TC = 100°C)

ICBO

––

0.08

100

µAdc

Emitter Cutoff Current (VEB= 4V)

IEBO

—

0.003

µA

DC Current Gain

(IC = 5 mADC, VCE = 10 VDC)

(IC = 20 mADC, VCE = 10 VDC)

hFE

180

––

Collector – Emitter Saturation Voltage

(IC = 20 mADC, IB = 5 mADC)

VCE(Sat)

––

0.07

1.8

Vdc

Base – Emitter Saturation Voltage

(IC = 20 mADC, IB = 5 mADC)

VBE(Sat)

––

0.7

1.0

Vdc

Current Gain Bandwidth Product

(IC = 20 mADC, VCE = 10 VDC, f = 20 MHz)

––

MHz

Output Capacitance

(VCB = 10 VDC, IE = 0 ADC, f = 1.0 MHz)

Cob

––

12.5

Delay Time

VCC= 125 VDC,

Rise Time

IC= 100 mADC,

Storage Time

IB1= 20 mADC

Fall Time

IB2= 20 mADC

pw= 2 us

––

100

1500

450

200

1200

3000

800

nsec

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