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TLRMK16TAPTRK53 bảng dữ liệu(PDF) 2 Page - Toshiba Semiconductor |
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TLRMK16TAPTRK53 bảng dữ liệu(HTML) 2 Page - Toshiba Semiconductor |
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2 / 7 page ![]() TLRMK16TAP(K53M1,F 2010-03-18 2 Electrical and Optical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Forward voltage VF IF = 20 mA (Note 2) 1.85 2.15 2.45 V Reverse current IR VR = 4 V ⎯ ⎯ 50 µA Luminous intensity IV IF = 20 mA (Note 2) 1900 5400 10700 mcd Peak emission wavelength λP IF = 20 mA ⎯ 636 ⎯ nm Spectral line half width ∆λ IF = 20 mA ⎯ 14 ⎯ nm Dominant wavelength λd IF = 20 mA 620 626 634 nm Note 2: Lamps are classified into the following ranks according to their luminous intensity and forward voltage. Each packing box includes single Luminous Intensity class. IV _ rank classification Rank Min Max Accuracy T 1900 3380 U 3380 6010 ± 22.5% V 6010 10700 Unit mcd ⎯ Forward voltage _ rank classification Rank Min Max Accuracy A 1.85 2.05 B 2.05 2.25 ± 0.05V C 2.25 2.45 Unit V ⎯ Precaution Please be careful of the followings • Soldering temperature: 260°C max Soldering time: 3 s max (Soldering portion of lead: up to 1.6 mm from the body of the device) • If the lead is formed, the lead should be formed up to 1.6 mm from the body of the device without forming stress to the resin. Soldering should be performed after lead forming. • This visible LED lamp also emits some IR light. If a photodetector is located near the LED lamp, please ensure that it will not be affected by this IR light. |
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