IXYS reserves the right to change limits, test conditions, and dimensions.

IXGH 50N60C2

IXGT 50N60C2

IXYS MOSFETs and IGBTs are covered by one or more

4,850,072

4,931,844

5,034,796

5,063,307

5,237,481

5,381,025

6,404,065B1 6,162,665

6,534,343

6,583,505

of the following U.S. patents:

4,835,592

4,881,106

5,017,508

5,049,961

5,187,117

5,486,715

6,306,728B1

6,259,123B1 6,306,728B1 6,683,344

Symbol

Test Conditions

Characteristic Values

(T

min.

typ.

max.

g

fs

I

C

= 40 A; V

40

51

S

Pulse test, t

≤ 300 µs, duty cycle ≤ 2 %

C

ies

3700

pF

C

oes

V

230

pF

C

res

50

pF

Q

g

138

nC

Q

ge

I

25

nC

Q

gc

40

nC

t

d(on)

18

ns

t

ri

25

ns

t

d(off)

115

150

ns

t

fi

48

ns

E

off

0.38

0.7 mJ

t

d(on)

18

ns

t

ri

25

ns

E

on

0.45

mJ

t

d(off)

170

ns

t

fi

60

ns

E

off

0.74

mJ

R

thJC

0.31 K/W

R

thCK

(TO-247)

0.25

K/W

Inductive load, T

°°°°C

I

V

Inductive load, T

°°°°C

I

V

TO-247 AD Outline

Dim.

Millimeter

Inches

Min.

Max.

Min. Max.

A

4.7

5.3

.185

.209

A

1

2.2

2.54

.087

.102

A

2

2.2

2.6

.059

.098

b

1.0

1.4

.040

.055

b

1

1.65

2.13

.065

.084

b

2

2.87

3.12

.113

.123

C

.4

.8

.016

.031

D

20.80

21.46

.819

.845

E

15.75

16.26

.610

.640

e

5.20

5.72

0.205 0.225

L

19.81

20.32

.780

.800

L1

4.50

.177

∅P

3.55

3.65

.140

.144

Q

5.89

6.40

0.232 0.252

R

4.32

5.49

.170

.216

S

6.15 BSC

242 BSC

e

∅ P

TO-268 Outline

Min. Recommended Footprint

(Dimensions in inches and mm)