IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:

4,835,592

4,881,106

5,017,508

5,049,961

5,187,117

5,486,715

6,306,728B1

4,850,072

4,931,844

5,034,796

5,063,307

5,237,481

5,381,025

IXFR 21N100Q

V

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

0

15

30

45

60

75

90

Pulse Width - Seconds

0.001

0.010

0.100

1.000

V

0

5

10

15

20

25

30

35

40

100

1000

10000

Gate Charge - nC

0

40

80

120

160

200

0

2

4

6

8

10

Crss

Coss

V

I

I

f = 100kHz

T

T

Ciss

30000

60

Fig. 7 Gate Charge Characteristic Curve

Fig. 8 Capacitance Curves

Fig. 9 Drain Current vs Drain Source Voltage

Fig. 10 Transient Thermal Impedance