IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXFN360N10T

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

7,005,734 B2

7,157,338B2

by one or more of the following U.S. patents: 4,850,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405 B2 6,759,692

7,063,975 B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2 7,071,537

Note 1. Pulse test, t

≤ 300μs, duty cycle, d ≤ 2%.

SOT-227B (IXFN) Outline

(M4 screws (4x) supplied)

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

V

110

180

S

C

iss

33

nF

C

oss

V

3160

pF

C

rss

400

pF

R

Gi

Gate Input Resistance

1.20

Ω

t

d(on)

47

ns

t

r

100

ns

t

d(off)

80

ns

t

f

160

ns

Q

g(on)

525

nC

Q

gs

V

145

nC

Q

gd

165

nC

R

thJC

0.18

°C/W

R

thCS

0.05

°C/W

Source-Drain Diode

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

I

S

V

360

A

I

SM

Repetitive, Pulse Width Limited by T

JM

1440

A

V

SD

I

1.2

V

t

rr

130 ns

I

RM

6.60

A

Q

RM

0.33

μC

I

-di/dt = 100A/

μs

V

Resistive Switching Times

V

R