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IXFP130N10T2 bảng dữ liệu(PDF) 1 Page - IXYS Corporation |
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IXFP130N10T2 bảng dữ liệu(HTML) 1 Page - IXYS Corporation |
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1 / 6 page ![]() © 2009 IXYS CORPORATION, All Rights Reserved Symbol Test Conditions Maximum Ratings V DSS T J = 25 °C to 175°C 100 V V DGR T J = 25 °C to 175°C, R GS = 1MΩ 100 V V GSS Continuous ± 20 V V GSM Transient ± 30 V I D25 T C = 25°C (Chip Capability) 130 A I LRMS Lead Current Limit, RMS 120 A I DM T C = 25°C, Pulse Width Limited by TJM 300 A I A T C = 25°C65 A E AS T C = 25°C 800 mJ dV/dt I S ≤ I DM,, VDD ≤ VDSS,TJ ≤ 175°C 20 V/ns P D T C = 25°C 360 W T J -55 ... +175 °C T JM 175 °C T stg -55 ... +175 °C T L 1.6mm (0.062in.) from Case for 10s 300 °C T sold Plastic Body for 10 seconds 260 °C M d Mounting Torque (TO-220) 1.13 / 10 Nm/lb.in. Weight TO-263 2.5 g TO-220 3.0 g Symbol Test Conditions Characteristic Values (T J = 25°C Unless Otherwise Specified) Min. Typ. Max. BV DSS V GS = 0V, ID = 250μA 100 V V GS(th) V DS = VGS, ID = 1mA 2.0 4.5 V I GSS V GS = ± 20V, VDS = 0V ±200 nA I DSS V DS = VDSS, VGS = 0V 10 μA T J = 150°C 500 μA R DS(on) V GS = 10V, ID = 0.5 • ID25, Notes 1, 2 9.1 m Ω TrenchT2TM HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrnsic Rectifier IXFA130N10T2 IXFP130N10T2 V DSS = 100V I D25 = 130A R DS(on) ≤ ≤≤≤≤ 9.1m Ω Ω Ω Ω Ω DS100111(10/09) Features International Standard Packages 175°C Operating Temperature High Current Handling Capability Fast Intrinsic Rectifier Dynamic dV/dt Rated Low R DS(on) Advantages Easy to Mount Space Savings High Power Density Applications DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies DC Choppers AC Motor Drives Uninterruptible Power Supplies High Speed Power Switching Applications Advance Technical Information G = Gate D = Drain S = Source Tab = Drain TO-263 AA (IXFA) G D S TO-220AB (IXFP) D (Tab) G S D (Tab) |
Số phần tương tự - IXFP130N10T2 |
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Mô tả tương tự - IXFP130N10T2 |
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