IXYS reserves the right to change limits, test conditions, and dimensions.

FMP36-015P

Ref: IXYS CO 0077 R0

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

7,005,734 B2

7,157,338B2

by one or more of the following U.S. patents: 4,850,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405 B2 6,759,692

7,063,975 B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2 7,071,537

Symbol

Characteristic Values

(T

Min.

Typ.

Max.

BV

DSS

V

-150

V

V

GS(th)

V

- 2.5

- 4.5

V

I

GSS

V

± 100 nA

I

DSS

V

-10

μA

T

- 250

μA

R

DS(on)

V

110 m

Ω

g

fs

V

11

19

S

C

iss

3100

pF

C

oss

V

610

pF

C

rss

100

pF

t

d(on)

Resistive Switching Times

21

ns

t

r

V

V

31

ns

t

d(off)

R

36

ns

t

f

15

ns

Q

g(on)

55

nC

Q

gs

V

V

20

nC

Q

gd

18

nC

R

thJC

1.0

°C/W

R

thCS

0.15

°C/W

Drain-Source Diode

Characteristic Values

(T

Symbol

Min.

Typ.

Max.

I

S

V

- 22

A

I

SM

Repetitive, pulse width limited by T

JM

-140

A

V

SD

I

- 3.3

V

t

rr

I

228

ns

Q

RM

V

2.0

μC

I

RM

-17.6

A