IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETs and IGBTs are covered by one or more

of the following U.S. patents:

4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1

4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665

6,534,343

6,583,505

IXFN 20N120

Fig. 10. Capacitance

10

100

1000

10000

0

5

10

15

20

25

30

35

40

V

f = 1MHz

Fig. 9. Gate Charge

0

1

2

3

4

5

6

7

8

9

10

0

20

40

60

80

100

120

140

160

Q

I

Fig. 7. Transconductance

0

5

10

15

20

25

30

35

40

45

50

55

0

5

10

15

20

25

30

35

I

25ºC

125ºC

Fig. 8. Source Current vs.

Source-To-Drain Voltage

0

10

20

30

40

50

60

70

0.4

0.6

0.8

1

1.2

1.4

V

Fig. 11. Maxim um Transient Therm al Resistance

0

0.02

0.04

0.06

0.08

0.1

0.12

0.14

0.16

0.18

1

10

100

1000

Pulse Width - milliseconds