IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592

4,881,106

5,017,508

5,049,961

5,187,117

5,486,715

4,850,072

4,931,844

5,034,796

5,063,307

5,237,481

5,381,025

IXYS reserves the right to change limits, test conditions, and dimensions.

IXFJ 36N30

Symbol

Test Conditions

Characteristic Values

(T

min.

typ.

max.

g

fs

V

DS

= 10 V; I

12

22

S

C

iss

2970

pF

C

oss

V

GS

= 0 V, V

530

pF

C

rss

180

pF

t

d(on)

29

ns

t

r

V

GS

= 10 V, V

V

130

ns

t

d(off)

R

110

ns

t

f

98

ns

Q

g(on)

106

140

nC

Q

gs

V

GS

= 10 V, V

V

24

40

nC

Q

gd

43

74

nC

R

thJC

0.65

K/W

R

thCK

0.24

K/W

Source-Drain Diode

Characteristic Values

(T

Symbol

Test Conditions

min.

typ.

max.

I

S

V

36

A

I

SM

Repetitive;

144

A

pulse width limited by T

JM

V

SD

I

F

= I

1.8

V

Pulse test, t

≤ 300 µs, duty cycle d ≤ 2 %

t

rr

I

F

= I

T

25

°C

200

ns

V

T

350

ns

Leaded TO-268 Package Outline