IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXFH12N100F

IXFT12N100F

Note: 1. Pulse test, t

≤ 300 μs, duty cycle d ≤ 2 %

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

7,005,734 B2

7,157,338B2

by one or more of the following U.S. patents: 4,850,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405 B2 6,759,692

7,063,975 B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2 7,071,537

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

V

8

12

S

C

iss

2700

pF

C

oss

V

GS

= 0V, V

305

pF

C

rss

93

pF

t

d(on)

12

ns

t

r

9.8

ns

t

d(off)

31

ns

t

f

12

ns

Q

g(on)

77

nC

Q

gs

V

16

nC

Q

gd

42

nC

R

thJC

0.42

°C/W

R

thCS

(TO-247)

0.21

°C/W

Source-Drain Diode

Characteristic Values

T

Min.

Typ.

Max.

I

S

V

12

A

I

SM

Repetitive, pulse width limited by T

JM

48

A

V

SD

I

1.5

V

t

rr

250 ns

Q

RM

0.8

μC

I

RM

7.0

A

I

V

Dim.

Millimeter

Inches

Min.

Max.

Min. Max.

A

4.7

5.3

.185

.209

A

1

2.2

2.54

.087

.102

A

2

2.2

2.6

.059

.098

b

1.0

1.4

.040

.055

b

1

1.65

2.13

.065

.084

b

2

2.87

3.12

.113

.123

C

.4

.8

.016

.031

D

20.80 21.46

.819

.845

E

15.75 16.26

.610

.640

e

5.20

5.72 0.205 0.225

L

19.81 20.32

.780

.800

L1

4.50

.177

∅P

3.55

3.65

.140

.144

Q

5.89

6.40 0.232 0.252

R

4.32

5.49

.170

.216

S

6.15

BSC

242 BSC

e

∅ P

TO-247 (IXFH) Outline

TO-268 Outline

Min Recommended Footprint

Resistive Switching Times

V

R