GaAs SPDT Switch

DC - 20 GHz

Rev. V3

MASW-008322

2

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changes to the product(s) or information contained herein without notice.

ADVANCED:

Data Sheets contain information regarding a product M/A-COM Technology Solutions

is considering for development. Performance is based on target specifications, simulated results,

and/or prototype measurements. Commitment to develop is not guaranteed.

PRELIMINARY:

Data Sheets contain information regarding a product M/A-COM Technology

Solutions has under development. Performance is based on engineering tests. Specifications are

typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.

Commitment to produce in volume is not guaranteed.

Electrical Specifications

Parameter

Test Conditions

Units

Min.

Typ.

Max.

Insertion Loss

1 GHz

10 GHz

18 GHz

20 GHz

dB

—

—

—

—

0.4

1.0

1.5

1.9

0.55

—

—

2.5

Isolation

1 GHz

10 GHz

18 GHz

20 GHz

dB

50

—

—

39

52

48

43

40

—

—

—

—

VSWR

1 - 20 GHz

Ratio

—

2.0:1

—

Trise, Tfall

10% to 90% RF and 90% to 10% RF

ns

—

9

—

Ton, Toff

50% control to 90% RF, and 50% control to 10% RF

ns

—

12

Input P1dB

0.5 - 20 GHz, 0 to -5 V

dBm

—

30

—

IIP3

Two Tone, +5 dBm/Tone, 5 MHz Spacing, >50 MHz

0.5 - 20 GHz

dBm

—

48

—

Control Current

(Complementary Logic)

µA

—

—

3

—

50

20

Settling Time

50% Vctl to 0.1 dB of final value

µs

—

1

—

5. All specifications apply with 50 Ω impedance connected to all RF ports, 0 and –5 VDC control voltages.

6. Loss changes 0.0025 dB/°C (from –55°C to +85°C).

7. Max switching speed guaranteed by design.

Truth Table

9

Control Inputs

Condition of Switch

V1

V2

RF1

RF2

High

Low

Off

On

Low

High

On

Off

9. Vlow = -5 V, Vhigh = 0 V

Sample Board

Absolute Maximum Ratings

8

Parameter

Absolute Maximum

Control Voltage

-8.5 VDC

Input RF Power

+33 dBm

Operating Temperature

-40 to +85°C

Storage Temperature

-65°C to +150°C

8. Exceeding any one or combination of these limits may cause