LADLD30

Preliminary

CMOS IC

UNISONICTECHNOLOGIESCO.,LTD

4 of 8

www.unisonic.com.tw

QW-R502-330.c

ABSOLUTE MAXIMUM RATING

PARAMETER

SYMBOL

RATINGS

UNIT

-0.3 ~ +7

V

-0.3 ~ +3.3

V

EN and FB to GND

V

POK to GND

-0.3 ~ +7

V

Power Dissipation

3

W

Junction Temperature

150

°С

Storage Temperature

-65 ~ +150

°С

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient (Note 1)

42

°C/W

Junction to Case (Note 2)

18

°C/W

The exposed pad of HSOP-8 is soldered directly on the PCB.

2. The Thermal Pad Temperature is measured on the PCB copper area connected to the thermal pad of package.

OPERATING CONDITIONS

PARAMETER

SYMBOL

RATINGS

UNIT

Supply Voltage

Control

3.1 ~ 6

V

Supply Voltage

Input

1.1 ~ 3.3

V

0.8 ~ 1.2

V

Output Voltage

V

Output Current

0 ~ 4

A

Junction Temperature

-25 ~ +125

°С

ELECTRICAL CHARACTERISTICS

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

0.4

1

2

mA

EN = GND

180 380

µA

2.7

2.9

3.1

V

POR Threshold

0.8

0.9

1.0

V

0.4

V

POR Hysteresis

0.5

V

Reference Voltage

0.8

V

Output Voltage Accuracy

-1.5

+1.5

%

Line Regulation

OUT

×

IN

OUT

V

V

Δ

V

Δ

0

0.13 %/V

Load Regulation

OUT

OUT

V

V

Δ

0.06 0.15

%

4.8

5.7

6.6

A

4

A

4.6

5.5

6.4

A

Current Limit

3.8

A

0.17 0.25

V

Dropout Voltage

0.3

V