BU407_09 datasheet(2/3 Pages) UTC

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BU407

NPN EPITAXIAL SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R203-020.B

ABSOLUTE MAXIMUM RATINGS (Ta=25°С, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector Base Voltage

VCBO

330

Collector to Emitter Voltage

VCEO

150

Emitter to Base Voltage

VEBO

Collector Current

Base Current

Collector Dissipation (Ta =25°С)

Junction Temperature

150

°С

Storage Temperature

TSTG

-55 ~ +150

°С

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA

PARAMETER

SYMBOL

MIN

TYP

MAX

UNIT

Junction to Ambient

θJA

°С/W

Junction to Case

θJC

2.08

°С/W

ELECTRICAL CHARACTERISTICS (Ta=25°С, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNIT

Collector Emitter Sustaining Voltage

BVCEO

IC =100 mA, IB = 0

150

Collector-Emitter Saturation Voltage

VCE(SAT)

Base-Emitter On Voltage

VBE(SAT)

IC = 5 A, IB = 0.5 A

1.2

Collect Cutoff Current’

ICES

VCE =400 V

Emitter Cutoff Current

IEBO

VBE = 6 V, IC = 0

hFE1

IC = 500 mA, VCE = 5 V

hFE2

IC = 2 A, VCE = 5 V

200

DC Current Gain

hFE3

IC = 5 A, VCE = 5 V

Current Gain Bandwidth Product

IC= 500 mA, VCE = 10 V, f =1 MHz

MHZ

CLASSIFICATION OF hFE2

RANK

RANGE

35-85

75-125

115-200

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