BC817L-X-AE3-R datasheet(2/4 Pages) UTC

2 / 4 page

BC817

NPN SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R206-025.E

ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

VCES

Collector-Emitter Voltage

VCEO

Emitter-Base Voltage

VEBO

5.0

Collector Current -Continuous

1.5

SOT-23

310

Collector Dissipation

SOT-323

200

Junction Temperature

+150

°C

Storage Temperature

TSTG

-65 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

BVCEO

IC=10mA, IB=0

Collector-Base Breakdown Voltage

BVCES

IC=100μA,IE=0

Emitter-Base Breakdown Voltage

BVEBO

IE=10μA, Ic=0

VCB=20V

100

Collector Cut-OFF Current

ICBO

VCB=20V,Ta=150°C

μA

ON CHARACTERISTICS

hFE1

IC=100mA,VCE=1.0V

See Classification

DC Current Gain

hFE2

IC =500mA, VCE=1.0V

Collector-Emitter Saturation Voltage

VCE(SAT)

IC =500mA,IB=50mA

0.7

Base-Emitter On Voltage

VBE(ON)

IC =500mA, VCE=1.0V

1.2

CLASSIFICATION OF hFE1

RANK

RANGE

100-250

160-400

250-600

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