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6N10G-TN3-R bảng dữ liệu(PDF) 3 Page - Unisonic Technologies

tên linh kiện 6N10G-TN3-R
Giải thích chi tiết về linh kiện  6 Amps, 100 Volts N-CHANNEL POWER MOSFET
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6N10G-TN3-R bảng dữ liệu(HTML) 3 Page - Unisonic Technologies

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6N10
Preliminary
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
3 of 4
www.unisonic.com.tw
QW-R502-486.a
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP
MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
ID=250µA, VGS=0V
100
V
VDS=80V, VGS=0V
1
VDS=80V, VGS=0V, TJ=125°C
50
Drain-Source Leakage Current
IDSS
VDS=80V, VGS=0V, TJ=175°C
250
µA
Forward
VGS=+20V, VDS=0V
+100
nA
Gate- Source Leakage Current
Reverse
IGSS
VGS=-20V, VDS=0V
-100
nA
On-State Drain Current (Note 2)
ID(on)
VDS=5V, VGS=10V
8.0
A
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
1.0
3.0
V
VGS=10V, ID=3A
0.160 0.200
VGS=10V, ID=3A, TJ=125°C
0.350
VGS=10V, ID=3A, TJ=175°C
0.450
Static Drain-Source On-State Resistance
(Note 2)
RDS(ON)
VGS=4.5, ID=1.0A
0.180 0.225
Ω
Forward Transconductance (Note 2)
gFS
VDS=15V, ID=3A
8.5
S
DYNAMIC PARAMETERS
(Note1)
Input Capacitance
CISS
240
pF
Output Capacitance
COSS
42
pF
Reverse Transfer Capacitance
CRSS
VGS=0V, VDS=25V, f=1.0MHz
17
pF
SWITCHING PARAMETERS
Total Gate Charge (Note 3)
QG
2.7
4.0
nC
Gate to Source Charge (Note 3)
QGS
0.6
nC
Gate to Drain Charge (Note 3)
QGD
VDS=50V, VGS=5V, ID=6.5A
0.7
nC
Turn-ON Delay Time (Note3)
tD(ON)
7
11
ns
Rise Time (Note 3)
tR
8
12
ns
Turn-OFF Delay Time (Note 3)
tD(OFF)
8
12
ns
Fall-Time (Note 3)
tF
VDD=50V, RL=7.5Ω, ID≈6.5A,
VGEN=10V, RG=2.5 Ω
9
14
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
(TC=25°C)
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
8.0
A
Drain-Source Diode Forward Voltage (Note 2)
VSD
IF=6.5A, VGS=0V
0.9
1.3
V
Reverse Recovery Time
tRR
IF=6.5A, di/dt=100A/µs
35
60
ns
Notes: 1. Guaranteed by design, not subject to production testing.
2. Pulse test; pulse width ≤300 ≤μs, duty cycle ≤2%.
3. Independent of operating temperature.



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