2SD2136 datasheet(2/4 Pages) UTC

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2SD2136

NPN SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R204-011.B

ABSOLUTE MAXIMUM RATINGS (Ta=25°С, unless otherwise specified )

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

VCBO

Collector-Emitter Voltage

VCEO

Emitter-Base Voltage

VEBO

Collector Current

Peak Collector Current

ICP

Collector Dissipation

1.5

Junction Temperature

150

°С

Storage Temperature

TSTG

-55 ~ +150

°С

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (Ta=25°С, unless otherwise specified )

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNIT

Collector-Base Breakdown Voltage

BVCEO

IC=30mA, IB=0

Collect Cutoff Current

ICEO

VCE=60V, IB=0

300

µA

Collect Cutoff Current

ICES

VCE=60 V, VBE=0

200

µA

Emitter Cutoff Current

IEBO

VBE=6 V, IC=0

hFE1

VCE=4V ,IC=1A

250

DC Current Gain

hFE2

VCE=4V ,IC=3A

Collector-Emitter Saturation Voltage

VCE(SAT)

IC =3A, IB=0.375A

1.2

Base-Emitter Voltage

VBE

VCE=4V ,IC=3A

1.8

Current Gain Bandwidth Product

VCE=15V, IE=0.1A, f =200MHz

220

MHZ

Turn On Time

tON

0.5

µS

Storage Time

2.5

µS

Fall Time

IC = 1A, IB1 =0.1A, IB2 =0.1A

0.4

µS

CLASSIFICATION OF hFE1

RANK

RANGE

40-90

70-150

120-250

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