2SC4672

NPN SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R208-004.D

PARAMETER

SYMBOL

RATINGS

UNIT

Collector to Base Voltage

60

V

Collector to Emitter Voltage

50

V

Emitter to Base Voltage

6

V

Collector Current

2

A

Collector Current (Pulse) (Note 1)

5

A

Collector Dissipation

500

mW

Junction Temperature

+150

°C

Storage Temperature

-40 ~ +150

°C

2.Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Collector-Base Breakdown Voltage

60

V

Collector-Emitter Breakdown Voltage

50

V

Emitter-Base Breakdown Voltage

6

V

Collector Cutoff Current

0.1

μA

Emitter Cutoff Current

0.1

μA

Collector-Emitter Saturation Voltage

0.1

0.35

V

DC Current Transfer Ratio

120

400

Transition Frequency

210

MHz

Output Capacitance

25

pF

Note : Measured using pulse current.

■

RANK

A

B

RANGE

120 ~ 240

200 ~ 400