2SC3647L-X-AB3-R datasheet(2/5 Pages) UTC

2 / 5 page

2SC3647

NPN SILICON TRANSISTOR

UNISONIC TECHNOLOGIES CO., LTD

2 of 5

www.unisonic.com.tw

QW-R208-039,C

ABSOLUATE MAXIUM RATINGS (Ta = 25°C)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector to Base Voltage

VCBO

120

Collector to Emitter Voltage

VCEO

100

Emitter to Base Voltage

VEBO

Collector Current

Collector Current (Pulse)

ICP

Collector Dissipation

500

Junction Temperature

150

°C

Storage Temperature

TSTG

-40 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (Ta= 25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

Collector-Base Breakdown Voltage

BVCBO

IC = 10μA, IE =0

120

Collector-Emitter Breakdown Voltage

BVCEO

IC = 1mA, RBE =∞

100

Emitter-Base Breakdown Voltage

BVEBO

IE = 10μA, IC=0

Collector Cutoff Current

ICBO

VCB = 100V, IE =0

100

Emitter Cutoff Current

IEBO

VEB = 4V, IC =0

100

Collector-Emitter Saturation Voltage

VCE(SAT)

IC = 1A, IB = 100mA

0.13

0.4

Base-Emitter Saturation Voltage

VBE(SAT)

IC = 1A, IB = 100mA

0.85

1.2

Output Capacitance

Cob

VCB = 10V, f =1MHz

DC Current Gain

hFE

VCE = 5V, IC = 100mA

100

400

Turn-ON Time

tON

See specified Test Circuit.

Storage Time

tSTG

See specified Test Circuit.

1000

Fall Time

See specified Test Circuit.

Gain-Bandwidth Product

VCE = 10V, IC = 100mA

120

MHz

■

CLASSIFICATION OF hFE

RANK

RANGE

100 ~ 200

140 ~ 280

200 ~ 400

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