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2N7002L-AE2-R bảng dữ liệu(PDF) 2 Page - Unisonic Technologies |
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2N7002L-AE2-R bảng dữ liệu(HTML) 2 Page - Unisonic Technologies |
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2 / 6 page ![]() 2N7002 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 2 of 6 www.unisonic.com.tw QW-R206-037,I ABSOLUTE MAXIMUM RATINGS (Ta=25°C unless otherwise noted.) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 60 V Drain-Gate Voltage (RGS ≤1MΩ) VDGR 60 V Continuous ±20 Gate Source Voltage Non Repetitive(tp<50 μs) VGSS ±40 V Continuous 300 Drain Current Pulsed ID 800 mA Power Dissipation Derated Above 25 °C PD 200 1.6 mW mW/ °C Junction Temperature TJ + 150 °C Storage Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL CHARACTERISTICS PARAMETER SYMBOL RATINGS UNIT Junction to Ambient θJA 625 °C/W ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=10μA 60 V Drain-Source Leakage Current IDSS VDS=60V, VGS =0V 1 μA IGSSF VGS =20V, VDS=0V 100 nA Gate-Source Leakage Current IGSSR VGS =-20V, VDS=0V -100 nA ON CHARACTERISTICS (Note) Gate Threshold Voltage VGS(TH) VGS = VDS, ID=250μA 1 2.1 2.5 V VGS = 10V, ID=500mA 0.6 3.75 Drain-Source On-Voltage VDS (ON) VGS = 5.0V, ID=50mA 0.09 1.5 V On-State Drain Current ID(ON) VGS=10V,VDS≥2VDS(ON) 500 2700 mA VGS =10V, ID=500mA 7.5 Ω Static Drain-Source On-Resistance RDS (ON) VGS =5.0V, ID=50mA 7.5 Ω DYNAMIC CHARACTERISTICS Input Capacitance CISS VDS=25V,VGS=0V,f=1.0MHz 20 50 pF Output Capacitance COSS 11 25 pF Reverse Transfer Capacitance CRSS 4 5 pF Turn-On Time tON VDD=30V, RL=150Ω ID=200mA, VGS =10V RGEN =25Ω 20 nS Turn-Off Time tOFF VDD=30V, RL=25Ω ID=200mA, VGS=10V RGEN =25Ω 20 nS DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage VSD VGS=0V, Is=115mA (Note ) 0.88 1.5 V Maximum Pulsed Drain-Source Diode Forward Current ISM 0.8 A Maximum Continuous Drain-Source Diode Forward Current Is 115 mA Note: Pulse Test: Pulse Width≤300μs, Duty Cycle≤2.0% |
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