2N60

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 6

www.unisonic.com.tw

QW-R502-053,Ma

PARAMETER

SYMBOL

RATINGS

UNIT

2N60-A

600

V

Drain-Source Voltage

2N60-B

650

V

Gate-Source Voltage

±30

V

Avalanche Current (Note 2)

2.0

A

Continuous

2.0

A

Drain Current

Pulsed (Note 2)

8.0

A

Single Pulsed (Note 3)

140

mJ

Avalanche Energy

Repetitive (Note 2)

4.5

mJ

Peak Diode Recovery dv/dt (Note 4)

dv/dt

4.5

V/ns

TO-220

54

W

TO-220F/TO-220F1

23

W

TO-251/TO-251L/TO-252

44

W

TO-262

54

W

Power Dissipation

TO-126

(

40

W

Junction Temperature

+150

°С

Ambient Operating Temperature

-55 ~ +150

°С

Storage Temperature

-55 ~ +150

°С

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA

PARAMETER

PACKAGE

SYMBOL

RATINGS

UNIT

TO-220

62.5

°С/W

TO-220F/TO-220F1

62.5

°С/W

TO-251/TO-251L/TO-252

100

°С/W

TO-262

62.5

°С/W

Junction to Ambient

TO-126

89

°С/W

TO-220

2.32

°С/W

TO-220F/TO-220F1

5.5

°С/W

TO-251/TO-251L/TO-252

2.87

°С/W

TO-262

2.32

°С/W

Junction to Case

TO-126

3.12

°С/W