2N65

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 6

www.unisonic.com.tw

QW-R502-370.a

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

650

V

Gate-Source Voltage

±30

V

Avalanche Current (Note 2)

2.0

A

Continuous

2.0

A

Drain Current

Pulsed (Note 2)

8.0

A

Single Pulsed (Note 3)

140

mJ

Avalanche Energy

Repetitive (Note 2)

4.5

mJ

Peak Diode Recovery dv/dt (Note 4)

dv/dt

4.5

V/ns

TO-220

54

W

TO-220F/TO-220F1

23

W

Power Dissipation

TO-251/TO-252

44

W

Junction Temperature

+150

°С

Operating Temperature

-55 ~ +150

°С

Storage Temperature

-55 ~ +150

°С

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA

PARAMETER

PACKAGE

SYMBOL

RATINGS

UNIT

TO-220

62.5

°С/W

TO-220F/TO-220F1

62.5

°С/W

Junction to Ambient

TO-251/TO-252

50

°С/W

TO-220

2.32

°С/W

TO-220F/TO-220F1

5.5

°С/W

Junction to Case

TO-251/TO-252

2.87

°С/W

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

650

V

Drain-Source Leakage Current

10

μA

Forward

100

nA

Gate-Source Leakage Current

Reverse

-100

nA

Breakdown Voltage Temperature

Coefficient

△

0.4

V/°С

ON CHARACTERISTICS

Gate Threshold Voltage

2.0

4.0

V

Static Drain-Source On-State Resistance

3.8

5

Ω

DYNAMIC CHARACTERISTICS

Input Capacitance

270 350

pF

Output Capacitance

40

50

pF

Reverse Transfer Capacitance

5

7

pF