2N40 datasheet(3/6 Pages) UTC

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2N40

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 6

www.unisonic.com.tw

QW-R502-524.a

ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

ID=250µA, VGS=0V

400

Breakdown Voltage Temperature

Coefficient

△

DSS/T

△ J VDS=VGS, ID=250µA

0.45

V/°C

Drain-Source Leakage Current

IDSS

VDS=400V, VGS=0V

µA

Forward

VGS=+30V, VDS=0V

+10 +200 nA

Gate- Source Leakage Current

Reverse

IGSS

VGS=-30V, VDS=0V

-10 -200 nA

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

VDS=VGS, ID=250µA

2.0

3.0

4.0

Static Drain-Source On-State Resistance

RDS(ON)

VGS=10V, ID=1.25A

2.0

3.5

Ω

DYNAMIC PARAMETERS

Input Capacitance

CISS

240

Output Capacitance

COSS

Reverse Transfer Capacitance

CRSS

VGS=0V, VDS=25V, f=1.0MHz

SWITCHING PARAMETERS

Total Gate Charge

QG(TOT)

Gate to Source Charge

QGS

Gate to Drain Charge

QGD

VGS=10V, VDS=320V, ID=2.5A

Turn-ON Delay Time

tD(ON)

Rise Time

Turn-OFF Delay Time

tD(OFF)

Fall-Time

VDD=200V, ID=2.5A, RG=24Ω,

RD=78 Ω

Internal Drain Inductance

Measured from drain lead 6

mm from package to centre of

die

4.5

Internal Source Inductance

Measured from source lead 6

mm from package to source

bond pad

7.5

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Body-Diode Continuous Current

2.5

Maximum Body-Diode Pulsed Current

ISM

TC=25°C

Drain-Source Diode Forward Voltage

VSD

IS=2.5A, VGS=0V

1.2

Body Diode Reverse Recovery Time

tRR

200

Body Diode Reverse Recovery Charge

QRR

IS=2.5A, VGS=0V, dI/dt=100A/µs

2.0

µC

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