3

Low Noise GaAs MMIC Power Amplifier

7.5 - 12.0 GHz

Rev. V6

MAAM71200

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M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make

changes to the product(s) or information contained herein without notice.

ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions

is considering for development. Performance is based on target specifications, simulated results,

and/or prototype measurements. Commitment to develop is not guaranteed.

PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology

Solutions has under development. Performance is based on engineering tests. Specifications are

typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.

Commitment to produce in volume is not guaranteed.

3. Nominal bias is obtained with on-chip resistors by grounding

pads S1b and S2b.

4. Ground pads S1b and S2c for lower current or ground pads

S1c and S2d for lowest current using on-chip resistors.

5. Optional biasing can be obtained with off-chip resistors bonded

to pads S1a and S2a. Adjusting the bias can customize the

performance to suit special requirements.

1000 pF min.

RF OUT

RF IN

S1a

or

S1b or S1c

S2a

or

S2b, S2c

or S2d

Outline Drawing