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PC3SD11YTZDF bảng dữ liệu(PDF) 1 Page - Sharp Corporation |
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PC3SD11YTZDF bảng dữ liệu(HTML) 1 Page - Sharp Corporation |
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1 / 1 page ![]() (Notice) In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device. Specifications are subject to change without notice for improvement. • • (Internet) Data for Sharp's optoelectronic/power devices is provided on internet. ( Address http://sharp-world.com/products/device/) • D2-030401-B As of April 2004 Applications Absolute Maximum Ratings Outline Dimensions Electro-optical Characteristics PC3SD11YTZDF Phototriac Coupler Low Input Drive Type Phototriac Coupler θ Anode mark 2.54± 0.25 0.6± 0.2 1.2± 0.3 7.62± 0.3 0.26± 0.1 0.5± 0.1 7.12± 0.3 θ : 0 to 13 1 2 3 6 5 4 1 2 3 NC 6 5 4 Internal connection 1 Anode 2 Cathode 3 NC 4 Anode/Cathode Anode/Cathode 5 No external connection 6 (1) Low input drive (Minimum trigger current : MAX. 3 mA) (2) High repetitive peak OFF-state voltage (VDRM : 600 V) (3) High isolation voltage (Viso(rms) : 5 000V) (4) Recognized by UL1577(double protection isolation) Approved by CSA Approved by VDE(DIN EN60747-5-2) {as model No. "3SD11"} (6) Lead-free components (adaptable to RoHS directive) (1) OA equipment (2) FA power supply (3) Vending machine (4) SSRs Features *1 50Hz sine wave *2 AC for 1 minute, RH=40 to 60%, f=60Hz *3 For 10s Parameter Symbol Ratings Unit Input Forward current IF 50 100 mA Reverse voltage VR 6 1.2 V Output RMS ON-state current IT(rms) mA Peak one cycle surge current *1 Isurge A Repetitive peak OFF-state voltage VDRM V Isolation voltage *2 Viso(rms) 5.0 kV Operating temperature Topr -30 to +100 Storage temperature Tstg -55 to +125 Soldering temperature *3 Tsol 260 600 1/1 (Unit:mm) (Ta=25 °C) (Ta=25 °C) °C °C °C Parameter Conditions Input Forward voltage IF =20 mA ON-state voltage Output VD =6 V Critical rate of rise of OFF-state voltage VD =1/√−2 • V DRM Transfer charac- teristics VD =6 V, R L =100 Ω VD =6 V, R L =100 Ω, I F =10 mA MIN. − − 0.1 1 000 5 ×1010 TYP. 1.2 − − 1011 MAX. 1.4 2.5 3.5 −− − Holding current Symbol VF VT IH dV/dt IFT Isolation resistance RISO IT =0.1 A Unit V Reverse current VR=3 V VD=VDRM IR Repetitive peak OFF-state current IDRM mA −− 10−5 A −− 10−6 A V/ µs − − 3 mA Ω V Turn-on time −− 100 ton µs DC =500 V, 40 to 60 %RH Minimum trigger current 3SD11 Under development New product D 4 - |
Số phần tương tự - PC3SD11YTZDF |
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Mô tả tương tự - PC3SD11YTZDF |
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