1

SPST Reflective AlGaAs PIN Diode Switch

Rev. V5

MA4AGSW1

• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400

• India Tel: +91.80.43537383

• China Tel: +86.21.2407.1588

Visit www.macomtech.com for additional data sheets and product information.

M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make

changes to the product(s) or information contained herein without notice.

ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions

is considering for development. Performance is based on target specifications, simulated results,

and/or prototype measurements. Commitment to develop is not guaranteed.

PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology

Solutions has under development. Performance is based on engineering tests. Specifications are

typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.

Commitment to produce in volume is not guaranteed.

FEATURES

 -5V for low loss state

+10mA for Isolation state

hetero-junction anode technology

DESCRIPTION

The MA4AGSW1 is an Aluminum-Gallium-Arsenide,

single pole, single throw (SPST), PIN diode switch.

The switch features enhanced AlGaAs anodes which

are formed using M/A-COM Tech’s patented hetero-

junction technology. This technology produces a

switch with less loss than conventional GaAs proc-

esses. As much as a 0.3 dB reduction in insertion

loss can be realized at 50GHz. These devices are

fabricated on an OMCVD epitaxial wafer using a

process designed for high device uniformity and

extremely low parasitics. The diodes themselves

exhibit low series resistance, low capacitance, and

fast switching speed. They are fully passivated with

silicon nitride and have an additional polymer layer

for

scratch

protection.

The

protective

coating

prevents damage to the diode junction and anode

air-bridges during handling and assembly. Off chip

bias circuitry is required.

APPLICATIONS

The high electron mobility of AlGaAs and the low

capacitance of the PIN diodes makes this switch

ideal for fast switching, high frequency, multi-throw

switch designs. These AlGaAs PIN switches are use

in switching arrays for radar systems, radiometers,

test equipment and other multi-assembly compo-

nents.

Yellow areas indicate bond pads

J1

J2

Parameter

Maximum Rating

Operating Temperature

-55°C to +125°C

Storage Temperature

-55°C to +150°C

Incident C.W. RF Power

+23dBm C.W.

Breakdown Voltage

25V

Bias Current

± 25mA

Junction Temperature

+150°C

* Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.

Maximum combined operating conditions for RF Power, D.C.

bias, and temperature: +23 dBm C.W. @ 10 mA (per diode) @

+85°C.