IPW60R045CP_08 datasheet(1/11 Pages) INFINEON

tên linh kiện	IPW60R045CP

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IPW60R045CP

CoolMOS

® Power Transistor

Features

• Worldwide best R ds,on in TO247

• Ultra low gate charge

• Extreme dv/dt rated

• High peak current capability

• Qualified according to JEDEC

1) for target applications

• Pb-free lead plating; RoHS compliant

CoolMOS CP is specially designed for:

• Hard switching SMPS topologies

Maximum ratings, at T j=25 °C, unless otherwise specified

Parameter

Symbol Conditions

Unit

Continuous drain current

I D

T C=25 °C

A

T C=100 °C

Pulsed drain current

2)

I D,pulse

T C=25 °C

Avalanche energy, single pulse

E AS

I D=11 A, V DD=50 V

1950

mJ

Avalanche energy, repetitive t AR

2),3)

E AR

I D=11 A, V DD=50 V

Avalanche current, repetitive t AR

2),3)

I AR

A

MOSFET dv /dt ruggedness

dv /dt

V DS=0...480 V

V/ns

Gate source voltage

V GS

static

V

AC (f >1 Hz)

Power dissipation

P tot

T C=25 °C

W

Operating and storage temperature

T j, T stg

°C

Mounting torque

M3 and M3.5 screws

60

Ncm

Value

60

38

230

±30

431

-55 ... 150

3

11

50

±20

V DS @ Tjmax

650

V

R DS(on),max

0.045

Ω

Q g,typ

150

nC

Product Summary

Type

Package

Ordering Code

Marking

IPW60R045CP

PG-TO247-3-1

SP000067149

6R045

PG-TO247-3-1

Rev. 2.2

page 1

2008-01-21

Please note the new package dimensions arccording to PCN 2009-134-A

Số phần tương tự - IPW60R045CP_08

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Infineon Technologies A...	IPW60R045CPA	477Kb / 11P	CoolMOS Power Transistor Rev. 2.0 2010-02-15
Inchange Semiconductor ...	IPW60R045CPA	376Kb / 2P	N-Channel MOSFET Transistor

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Mô tả tương tự - IPW60R045CP_08

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
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IPW60R045CP bảng dữ liệu(PDF) 1 Page - Infineon Technologies AG

IPW60R045CP bảng dữ liệu(HTML) 1 Page - Infineon Technologies AG

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Mô tả tương tự - IPW60R045CP_08

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