2N5002 datasheet(2/2 Pages) MICROSEMI

2 / 2 page

TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803

Website: http: //www.microsemi.com

NPN POWER SILICON TRANSISTOR

Qualified per MIL-PRF-19500/534

T4-LDS-0038 Rev. 2 (081508)

Page 2 of 2

DYNAMIC CHARACTERISTICS

Parameters / Test Conditions

Symbol

Min.

Max.

Unit

Forward-Current Transfer Ratio

IC = 50mAdc, VCE = 5.0Vdc

IC = 2.5Adc, VCE = 5.0Vdc

IC = 5.0Adc, VCE = 5.0Vdc

2N5002

---

IC = 50mAdc, VCE = 5.0Vdc

IC = 2.5Adc, VCE = 5.0Vdc

IC = 5.0Adc, VCE = 5.0Vdc

2N5004

hFE

---

200

---

Base-Emitter Voltage Non-Saturated

VCE = 5.0Vdc, IC = 2.5Adc

VBE

1.45

Vdc

Collector-Emitter Saturation Voltage

IC = 2.5Adc, IB = 250mAdc

IC = 5.0Adc, IB = 500mAdc

VCE(sat)

0.75

1.5

Vdc

Base-Emitter Saturation Voltage

IC = 2.5Adc, IB = 250mAdc

IC = 5.0Adc, IB = 500mAdc

VBE(sat)

1.45

2.2

Vdc

DYNAMIC CHARACTERISTICS

Parameters / Test Conditions

Symbol

Min.

Max.

Unit

Magnitude of Common Emitter Small-Signal Short-Circuit. Forward Current

Transfer Ratio

IC = 500mA, VCE = 5.0Vdc, f = 10MHz

2N5002

2N5004

|hfe|

6.0

7.0

Output Capacitance

VCB = 10Vdc

Cobo

250

SWITCHING CHARACTERISTICS

Parameters / Test Conditions

Symbol

Min.

Max.

Unit

Turn-On Time

IC = 5Adc; IB1 = 500mAdc

ton

0.5

μs

Storage Time

IB2 = -500mAdc

1.4

μs

Fall Time

VBE(OFF) = 3.7Vdc

0.5

μs

Turn-Off Time

RL = 6Ω

toff

1.5

μs

SAFE OPERATING AREA

DC Tests

TC = +25°C, VCE = 0, tp = 1s, 1 Cycle

Test 1

VCE = 12Vdc, IC = 5.0Adc

Test 2

VCE = 32Vdc, IC = 1.7Adc

Test 3

VCE = 80Vdc, IC = 100mAdc

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