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33894 bảng dữ liệu(PDF) 11 Page - Freescale Semiconductor, Inc

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Analog Integrated Circuit Device Data
Freescale Semiconductor
11
33894
ELECTRICAL CHARACTERISTICS
DYNAMIC ELECTRICAL CHARACTERISTICS
POWER OUTPUT TIMING HS0:HC3 (CONTINUED)
Overcurrent High Detection Blanking Time
tOCH
1.0
10
20
µs
CS
to CSNS Valid Time (23)
tCNSVAL
–
–
10
µs
Watchdog Timeout (WD[1:0]) (24)
00
01
10
11
tWDTO0
tWDTO1
tWDTO2
tWDTO3
496
248
2000
1000
620
310
2500
1250
806
403
3250
1625
ms
Notes
23.
Time necessary for the CSNS to be with ±5% of the targeted value.
24.
Watchdog timeout delay measured from the rising edge of WAKE or RST from a sleep state condition, to output turn-ON with the output
driven OFF and FSI floating. The values shown are for WDR setting of [00]. The accuracy of tWDTO is consistent for all configured
watchdog timeouts.
Table 4. Dynamic Electrical Characteristics
Characteristics noted under conditions 4.5 V
≤ V
DD ≤ 5.5 V, 6.0 V ≤ VPWR ≤ 27 V, -40°C ≤ TJ ≤ 150°C unless otherwise noted.
Typical values noted reflect the approximate parameter means at TA = 25°C under nominal conditions unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit



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