D2012 datasheet(2/5 Pages) TOSHIBA

2 / 5 page

2SD2012

2009-12-01

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Collector cut-off current

ICBO

VCB = 60 V, IE = 0

―

100

μA

Emitter cut-off current

IEBO

VEB = 7 V, IC = 0

―

100

μA

Collector-emitter breakdown voltage

V (BR) CEO

IC = 50 mA, IB = 0

―

hFE (1)

VCE = 5 V, IC = 0.5 A

100

―

320

DC current gain

hFE (2)

VCE = 5 V, IC = 2 A

―

Collector-emitter saturation voltage

VCE (sat)

IC = 2 A, IB = 0.2 A

―

0.4

1.0

Base-emitter voltage

VBE

VCE = 5 V, IC = 0.5 A

―

0.75

1.0

Transition frequency

VCE = 5 V, IC = 0.5 A

―

MHz

Collector output capacitance

Cob

VCB = 10 V, IE = 0, f = 1 MHz

―

Marking

Note 2: A line under a Lot No. identifies the indication of product Labels.

Not underlined: [[Pb]]/INCLUDES > MCV

Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]

Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS

compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27

January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment.

Lot No.

Note 2

D2012

Part No. (or abbreviation code)

D2012 bảng dữ liệu(PDF) 2 Page - Toshiba Semiconductor

D2012 bảng dữ liệu(HTML) 2 Page - Toshiba Semiconductor

Html Pages

1 2 3 4 5

bảng dữ liệu tải về

Link URL