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ZXTPS720MC bảng dữ liệu(PDF) 4 Page - Diodes Incorporated |
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ZXTPS720MC bảng dữ liệu(HTML) 4 Page - Diodes Incorporated |
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4 / 10 page ![]() ZXTPS720MC Document Number DS31938 Rev. 2 - 2 4 of 10 www.diodes.com January 2010 © Diodes Incorporated A Product Line of Diodes Incorporated ZXTPS720MC Maximum Ratings, Schottky Diode Parameter Symbol Limit Unit Continuous Reverse Voltage VR 40 V Forward Voltage @ IF = 1000mA (typ) VF 425 mV Forward Current IF 1850 mA Average Peak Forward Current D=50% IFAV 3 A Non Repetitive Forward Current t ≤ 100µs t ≤ 10ms IFSM 12 7 A A Thermal Characteristics, Schottky Diode Characteristic Symbol Value Unit Power Dissipation at TA = 25°C (Notes a and f) Linear Derating Factor PD 1.2 12 W mW/ °C Power Dissipation at TA = 25°C (Notes b and f) Linear Derating Factor PD 2 20 W mW/ °C Power Dissipation at TA = 25°C (Notes c and f) Linear Derating Factor PD 0.8 8 W mW/ °C Power Dissipation at TA = 25°C (Notes d and f) Linear Derating Factor PD 0.9 9 W mW/ °C Power Dissipation at TA = 25°C (Notes d and g) Linear Derating Factor PD 1..36 13.6 W mW/ °C Power Dissipation at TA = 25°C (Notes e and g) Linear Derating Factor PD 2.4 24 W mW/ °C Junction to Ambient (Notes a and f) RθJA 83 °C/W Junction to Ambient (Notes b and f) RθJA 51 °C/W Junction to Ambient (Notes c and f) RθJA 125 °C/W Junction to Ambient (Notes d and f) RθJA 111 °C/W Junction to Ambient (Notes d and g) RθJA 73.5 °C/W Junction to Ambient (Notes e and g) RθJA 41.7 °C/W Junction Temperature TJ 125 °C Operating and Storage Temperature Range TSTG -55 to +150 °C Notes: a. For a dual device surface mounted on 8 sq cm single sided 2 oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device. b. Measured at t <5 secs for a dual device surface mounted on 8 sq cm single sided 2 oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device. c. For a dual device surface mounted on 8 sq cm single sided 2 oz copper on FR4 PCB, in still air conditions with minimal lead connections only. d. For a dual device surface mounted on 10 sq cm single sided 1 oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device. e. For a dual device surface mounted on 85 sq cm single sided 2 oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device. f. For a dual device with one active die. g. For dual device with 2 active die running at equal power. |
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