ZXMP2120FF datasheet(4/10 Pages) DIODES

4 / 10 page

ZXMP2120FF

Issue 1 - January 2007

www.zetex.com

Electrical characteristics (at Tamb = 25°C unless otherwise stated)

Parameter

Symbol

Min.

Max.

Unit Conditions

Static

Drain-source breakdown

voltage

V(BR)DSS

-200

ID= 1mA, VGS=0V

Zero gate voltage drain current IDSS

-10

AVDS= -200V, VGS=0V

-100

VDS= -160V, VGS=0V, T=125C(‡)

Gate-body leakage

IGSS

VGS=±20V, VDS=0V

Gate-source threshold voltage

VGS(th)

-1.5

-3.5

ID= 250 A, VDS=VGS

Static drain-source on-state

resistance (*)

NOTES:

(*) Measured under pulsed conditions. Pulse width

300 s; duty cycle

2%.

RDS(on)

VGS= -10V, ID= -150mA

On-state drain current(*)

ID(on)

-300

VDS= -25V, VGS=-10V

Forward transconductance(*) (‡) gfs

VDS= -25V, ID= -150mA

Dynamic(‡)

Input capacitance

Ciss

100

VDS= -25V, VGS=0V

f=1MHz

Output capacitance

Coss

Reverse transfer capacitance

Crss

7pF

Switching (†) (‡)

(†) Switching characteristics are independent of operating junction temperature.

(‡) For design aid only, not subject to production testing.

Turn-on-delay time

td(on)

7ns

VDD= -25V, VGS= -10V

ID= -150mA

RSOURCE ≈ 50

Rise time

Turn-off delay time

td(off)

Fall time

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