ZXMP7A17KTC datasheet(4/8 Pages) DIODES

4 / 8 page

ZXMP7A17K

Issue 2 - August 2006

www.zetex.com

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Conditions

Static

Drain-source breakdown

voltage

V(BR)DSS

-70

ID= -250 A, VGS=0V

Zero gate voltage drain

current

IDSS

-1

AVDS= -70V, VGS=0V

Gate-body leakage

IGSS

100

VGS=±20V, VDS=0V

Gate-source threshold voltage VGS(th)

-1.0

ID= -250 A, VDS=VGS

Static drain-source on-state

resistance (*)

NOTES:

(*) Measured under pulsed conditions. Pulse width

300 s; duty cycle

2%.

RDS(on)

0.16

VGS= -10V, ID= -2.1A

0.25

VGS= -4.5V, ID = -1.7A

Forward transconductance(*)(‡) gfs

4.4

VDS= -15V, ID= -2.1A

Dynamic(‡)

Input capacitance

Ciss

635

VDS= -40V, VGS=0V

f=1MHz

Output capacitance

Coss

Reverse transfer capacitance

Crss

42.5

Switching (†) (‡)

(†) Switching characteristics are independent of operating junction temperature.

(‡) For design aid only, not subject to production testing.

Turn-on-delay time

td(on)

2.5

VDD= -35V, ID= -1A

RG≅6.0 , VGS= -10V

Rise time

3.4

Turn-off delay time

td(off)

27.9

Fall time

8ns

Total gate charge

9.6

VDS= -35V, VGS= -5V

ID= -2.1A

Total gate charge

VDS= -35V, VGS= -10V

ID= -2.1A

Gate-source charge

Qgs

1.77

Gate drain charge

Qgd

3.66

Source-drain diode

Diode forward voltage(*)

VSD

-0.85

-0.95

Tj=25°C, IS= -2.0A,

VGS=0V

Reverse recovery time(‡)

trr

29.8

Tj=25°C, IS= -2.1A,

di/dt=100A/ s

Reverse recovery charge(‡)

Qrr

38.5

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