ZXMN6A09DN8 datasheet(4/8 Pages) DIODES

4 / 8 page

ZXMN6A09DN8

Issue 6 - January 2007

www.zetex.com

Electrical characteristics (at Tamb = 25°C unless otherwise stated)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Conditions

Static

Drain-source breakdown voltage V(BR)DSS

ID= 250 A, VGS=0V

Zero gate voltage drain current

IDSS

AVDS= 60V, VGS=0V

Gate-body leakage

IGSS

100

VGS=±20V, VDS=0V

Gate-source threshold voltage

VGS(th)

1.0

3.0

ID= 250 A, VDS=VGS

Static drain-source on-state

resistance (*)

NOTES:

(*) Measured under pulsed conditions. Pulse width

300 s; duty cycle

2%.

RDS(on)

0.040

VGS= 10V, ID= 8.2A

0.060

VGS= 4.5V, ID = 7.4A

Forward transconductance(*)(‡)

gfs

VDS= 15V, ID= 8.2A

Dynamic(‡)

Input capacitance

Ciss

1407

VDS= 40V, VGS=0V

f=1MHz

Output capacitance

Coss

121

Reverse transfer capacitance

Crss

Switching (†) (‡)

(†) Switching characteristics are independent of operating junction temperature.

(‡) For design aid only, not subject to production testing.

Turn-on-delay time

td(on)

4.9

VDD= 15V, ID= 3.5A

RG≅6.0 , VGS= 10V

Rise time

5.0

Turn-off delay time

td(off)

25.3

Fall time

4.6

Total gate charge

12.4

VDS= 15V, VGS= 5V

ID= 3.5A

Total gate charge

24.2

VDS= 15V, VGS= 5V

ID= 3.5A

Gate-source charge

Qgs

5.2

Gate drain charge

Qgd

3.5

Source-drain diode

Diode forward voltage(*)

VSD

0.85

0.95

Tj=25°C, IS= 6.6A,

GS=0V

Reverse recovery time(‡)

trr

26.3

Tj=25°C, IS= 3.5A,

di/dt=100A/ s

Reverse recovery charge(‡)

Qrr

26.6

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