ZXMN2F34MA datasheet(2/8 Pages) DIODES

2 / 8 page

ZXMN2F34MA

Issue 3 - May 2008

www.zetex.com

Absolute maximum ratings

Thermal resistance

NOTES:

(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air

conditions.

(b) For a device surface mounted on FR4 PCB measured at t

≤ 5 sec.

μs - pulse width limited by maximum junction

temperature.

(d) Thermal resistance from junction to solder-point (at end of drain lead).

Parameter

Symbol

Limit

Unit

Drain source voltage

VDSS

Gate source voltage

VGS

±12

Continous Drain Current @ VGS=4.5; TA=25°C(b)

@ VGS=4.5; TA=70°C(b)

@ VGS=4.5; TA=25°C(a)

@ VGS=4.5; TA=25°C(d)

5.1

4.1

4.0

8.5

Pulsed drain current(c)

IDM

Continuous source current (body diode)(b)

3.1

Pulsed source current (body diode)(c)

ISM

Power dissipation at TA =25°C(a)

Linear derating factor

1.35

10.8

mW/

°C

Power dissipation at TA =25°C(b)

Linear derating factor

2.2

17.8

mW/

°C

Power dissipation at TA =25°C(d)

Linear derating factor

6.6

52.9

mW/

°C

Operating and storage temperature range

Tj, Tstg

-55 to 150

°C

Parameter

Symbol

Limit

Unit

Junction to ambient(a)

R JA

92.5

°C/W

Junction to ambient(b)

R JA

°C/W

Junction to lead(d)

R JL

18.9

°C/W

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