ZXMD63C03XTC datasheet(2/12 Pages) DIODES

2 / 12 page

ZXMD63C03X

ISSUE 2 - SEPTEMBER 2007

THERMAL RESISTANCE

PARAMETER

SYMBOL

VALUE

UNIT

Junction to Ambient (a)(d)

RθJA

143

°C/W

Junction to Ambient (b)(d)

RθJA

100

°C/W

Junction to Ambient (a)(e)

RθJA

120

°C/W

NOTES:

(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions

(b) For a device surface mounted on FR4 PCB measured at t 10 secs.

(d) For device with one active die.

(e) For device with two active die running at equal power.

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

N-CHANNEL

P-CHANNEL

UNIT

Drain-Source Voltage

VDSS

-30

Gate- Source Voltage

VGS

Continuous Drain Current

(VGS=4.5V; TA=25°C)(b)(d)

(VGS=4.5V; TA=70°C)(b)(d)

2.3

1.8

-2.0

-1.6

Pulsed Drain Current (c)(d)

IDM

-9.6

Continuous Source Current (Body Diode)(b)(d)

1.5

-1.4

Pulsed Source Current (Body Diode)(c)(d)

ISM

-9.6

Power Dissipation at TA=25°C (a)(d)

Linear Derating Factor

0.87

6.9

mW/°C

Power Dissipation at TA=25°C (a)(e)

Linear Derating Factor

1.04

8.3

mW/°C

Power Dissipation at TA=25°C (b)(d)

Linear Derating Factor

1.25

mW/°C

Operating and Storage Temperature Range

Tj:Tstg

-55 to +150

°C

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