BCR2PM-14LE

Preliminary

R07DS0233EJ0100 Rev.1.00

Page 2 of 6

Jan 05, 2011

Parameter

Symbol

Ratings

Unit

Conditions

RMS on-state current

2

A

Commercial frequency, sine full wave

360° conduction

Surge on-state current

10

A

60 Hz sinewave 1 full cycle, peak value,

non-repetitive

I

I

0.41

A

Value corresponding to 1 cycle of half

wave 60 Hz, surge on-state current

Peak gate power dissipation

1

W

Average gate power dissipation

0.1

W

Peak gate voltage

6

V

Peak gate current

1

A

Junction temperature

Tj

– 40 to +150

C

Storage temperature

Tstg

– 40 to +150

C

Mass

—

2.0

g

Typical value

Notes: 1. Gate open.

Electrical Characteristics

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test conditions

Repetitive peak off-state current

—

—

1.0

mA

Tj = 150

C, V

On-state voltage

—

—

2.1

V

Tj = 25

C, I

Instantaneous measurement



—

—

2.0

V



—

—

2.0

V

Gate trigger voltage

Note2



—

—

2.0

V

Tj = 25

C, V



—

—

10

mA



—

—

10

mA

Gate trigger current

Note2



—

—

10

mA

Tj = 25

C, V

Gate non-trigger voltage

0.1

—

—

V

Tj = 150

C, V

Thermal resistance

—

—

45

C/W

Junction to ambient,

Natural convection

Critical-rate of rise of off-state

commutation voltage

Note3

(dv/dt)c

0.5

—

—

V/

s

Tj = 125

C

Notes: 2. Measurement using the gate trigger characteristics measurement circuit.

3. Test conditions of the critical-rate of rise of off-state commutation voltage is shown in the table below.

Test conditions

Commutating voltage and current waveforms

(inductive load)

1. Junction temperature

Tj = 125

C

2. Rate of decay of on-state commutating current

(di/dt)c = –1.0 A/ms

3. Peak off-state voltage

Supply Voltage

Time

Time

Time

Main Current

Main Voltage

(di/dt)c

(dv/dt)c