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MIC2198BML bảng dữ liệu(PDF) 9 Page - Micrel Semiconductor |
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MIC2198BML bảng dữ liệu(HTML) 9 Page - Micrel Semiconductor |
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9 / 14 page ![]() October 2005 9 MIC2198 MIC2198 Micrel, Inc. Applications Information The following applications information includes component selection and design guidelines. Inductor Selection Values for inductance, peak, and RMS currents are required to select the output inductor. The input and output voltages and the inductance value determine the peak to peak induc- tor ripple current. Generally, higher inductance values are used with higher input voltages. Larger peak to peak ripple currents will increase the power dissipation in the inductor and MOSFETs. Larger output ripple currents will also require more output capacitance to smooth out the larger ripple cur- rent. Smaller peak to peak ripple currents require a larger inductance value and therefore a larger and more expensive inductor. A good compromise between size, loss and cost is to set the inductor ripple current to be equal to 20% of the maximum output current. The inductance value is calculated by the equation below. L VOUT × (VIN(max) − VOUT) VIN(max) × fS × 0.2 × IOUT(max) = where: fS = switching frequency 0.2 = ratio of AC ripple current to DC output current VIN(max) = maximum input voltage The peak-to-peak inductor current (AC ripple current) is: I VOUT × (VIN(max) −VOUT) VIN(max) × fS × L PP = Thepeakinductorcurrentisequaltotheaverageoutputcurrent plus one half of the peak to peak inductor ripple current. I I 0.5 I PK OUT(max) PP = + × The RMS inductor current is used to calculate the I2×R losses in the inductor. I I 1 1 3 I I INDUCTOR(rms) OUT(max) P OUT(max) 2 = × + Maximizing efficiency requires the proper selection of core material and minimizing the winding resistance. The high frequency operation of the MIC2198 requires the use of fer- rite materials for all but the most cost sensitive applications. Lower cost iron powder cores may be used but the increase in core loss will reduce the efficiency of the power supply. This is especially noticeable at low output power. The winding resistance decreases efficiency at the higher output current levels. The winding resistance must be minimized although this usually comes at the expense of a larger inductor. The power dissipated in the inductor is equal to the sum of the core and copper losses. At higher output loads, the core losses are usually insignificant and can be ignored. At lower output currents, the core losses can be a significant contributor. Core loss information is usually available from the magnetics vendor. Copper loss in the inductor is calculated by the equation below: PINDUCTORCu = IINDUCTOR(rms)2 × RWINDING The resistance of the copper wire, RWINDING, increases with temperature.The value of the winding resistance used should be at the operating temperature. RWINDING(hot) = RWINDING(20°C) × 1 + 0.0042 × (THOT − T20°C) where: THOT = temperature of the wire under operating load T20°C = ambient temperature RWINDING(20°C) is room temperature winding resistance (usually specified by the manufacturer) Current-Sense Resistor Selection Low inductance power resistors, such as metal film resistors should be used. Most resistor manufacturers make low induc- tance resistors with low temperature coefficients, designed specifically for current-sense applications. Both resistance and power dissipation must be calculated before the resis- tor is selected. The value of RSENSE is chosen based on the maximum output current and the maximum threshold level. The power dissipated is based on the maximum peak output current at the minimum overcurrent threshold limit. R 55mV I SENSE OUT(max) = The maximum overcurrent threshold is: I 95mV R OVERCURRENT(max) CS = The maximum power dissipated in the sense resistor is: PD(R SENCE) = IOVERCURRENT(max) 2 × RCS MOSFET Selection External N-Channel logic-level power MOSFETs must be used for the high- and low-side switches. The MOSFET gate-to-source drive voltage of the MIC2198 is regulated by an internal 5V VDD regulator. Logic-level MOSFETs, whose operation is specified at VGS = 4.5V must be used. It is important to note the on-resistance of a MOSFET in- creases with increasing temperature. A 75°C rise in junction temperature will increase the channel resistance of the MOS- FET by 50% to 75% of the resistance specified at 25°C. This change in resistance must be accounted for when calculating MOSFET power dissipation. Total gate charge is the charge required to turn the MOSFET on and off under specified operating conditions (VDS and VGS). The gate charge is supplied by the MIC2198 gate drive circuit. At 500kHz switching frequency, the gate charge can be a significant source of power dissipation in the MIC2198. At low output load this power dissipation is noticeable as a reduction in efficiency. The average current required to drive the high-side MOSFET is: I Q f G[high-side](avg) G S = × |
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