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PMLL4448 bảng dữ liệu(PDF) 3 Page - NXP Semiconductors |
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PMLL4448 bảng dữ liệu(HTML) 3 Page - NXP Semiconductors |
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3 / 11 page ![]() PMLL4148L_PMLL4448 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 8 — 1 February 2011 3 of 11 NXP Semiconductors PMLL4148L; PMLL4448 High-speed switching diodes [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Tj =25 °C prior to surge. 6. Thermal characteristics [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 7. Characteristics [1] When switched from IF = 10 mA to IR =60mA; RL = 100 Ω; measured at IR =1mA. [2] When switched from IF =50mA; tr =20ns. Ptot total power dissipation Tamb =25 °C [1] - 500 mW Tj junction temperature - 200 °C Tamb ambient temperature −65 +200 °C Tstg storage temperature −65 +200 °C Table 6. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Table 7. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-a) thermal resistance from junction to ambient in free air [1] - - 350 K/W Rth(j-sp) thermal resistance from junction to solder point - - 300 K/W Table 8. Characteristics Tamb =25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit VF forward voltage PMLL4148L IF = 50 mA --1 V PMLL4448 IF = 5 mA 620- 720mV IF = 100 mA --1 V IR reverse current VR = 20 V --25 nA VR =20V; Tj =150 °C --50 μA IR reverse current PMLL4448 VR =20V; Tj =100 °C --3 μA Cd diode capacitance VR = 0 V; f = 1 MHz --4 pF trr reverse recovery time [1] --4 ns VFR forward recovery voltage [2] --2.5 V |
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