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PMLL4448 bảng dữ liệu(PDF) 3 Page - NXP Semiconductors

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Giải thích chi tiết về linh kiện  High-speed switching diodes
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PMLL4448 bảng dữ liệu(HTML) 3 Page - NXP Semiconductors

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PMLL4148L_PMLL4448
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 8 — 1 February 2011
3 of 11
NXP Semiconductors
PMLL4148L; PMLL4448
High-speed switching diodes
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
Tj =25 °C prior to surge.
6.
Thermal characteristics
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
7.
Characteristics
[1]
When switched from IF = 10 mA to IR =60mA; RL = 100 Ω; measured at IR =1mA.
[2]
When switched from IF =50mA; tr =20ns.
Ptot
total power dissipation
Tamb =25 °C
[1] -
500
mW
Tj
junction temperature
-
200
°C
Tamb
ambient temperature
−65
+200
°C
Tstg
storage temperature
−65
+200
°C
Table 6.
Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
Table 7.
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-a)
thermal resistance from
junction to ambient
in free air
[1] -
-
350
K/W
Rth(j-sp)
thermal resistance from
junction to solder point
-
-
300
K/W
Table 8.
Characteristics
Tamb =25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VF
forward voltage
PMLL4148L
IF = 50 mA
--1
V
PMLL4448
IF = 5 mA
620-
720mV
IF = 100 mA
--1
V
IR
reverse current
VR = 20 V
--25
nA
VR =20V; Tj =150 °C
--50
μA
IR
reverse current
PMLL4448
VR =20V; Tj =100 °C
--3
μA
Cd
diode capacitance
VR = 0 V; f = 1 MHz
--4
pF
trr
reverse recovery time
[1] --4
ns
VFR
forward recovery voltage
[2] --2.5
V



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