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ET730 bảng dữ liệu(PDF) 2 Page - Estek Electronics Co. Ltd |
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ET730 bảng dữ liệu(HTML) 2 Page - Estek Electronics Co. Ltd |
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2 / 5 page ![]() ET730 ■ Thermal Characteristics Ratings Parameter Symbol TO-220 TO-220F Units Thermal Resistance Junction-Ambient RthJA 62.5 Thermal Resistance, Case-to-Sink Typ. RthCS 0.5 -- Thermal Resistance Junction-Case RthJC 1.64 3.13 ℃/W ■ Electrical Characteristics(T J=25℃,unless Otherwise specified.) 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 14 mH, IAS = 6.0 A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 6.0 A, di/dt ≤ 200A/μs, VDD≤BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤300μs, Duty cycle≤ 2% 5. Essentially independent of operating temperature Parameter Symbol Test Conditions Min Typ Max Units Off Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V,ID=250µA 400 -- -- V VDS=400V,VGS=0V -- -- 1 µA Zero Gate Voltage Drain Current IDSS VDS=320V,TC=125℃ -- -- 10 µA Forward VGS=30V,VDS=0V -- -- 100 nA Gate-Body Leakage Current Reverse IGSS VGS=-30V,VDS=0V -- -- -100 nA Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250µA -- 0.6 -- V/℃ On Characteristics Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA 2.0 -- 4.0 V Static Drain-Source On-Resistance RDS(ON) VDS=10V,ID=3.0A -- 0.83 1.0 Dynamic Characteristics Input Capacitance CISS -- 520 -- pF Output Capacitance COSS -- 80 -- pF Reverse Transfer Capacitance CRSS VDS=25V,VGS=0V, f=1MHZ -- 15 -- pF Switching Characteristics Turn-On Delay Time tD(ON) -- 10 -- ns Rise Time tR -- 60 -- ns Turn-Off Delay Time tD(OFF) -- 20 -- ns Fall Time tF VDD=200V,ID=6.0A, RG=25 (Note 4, 5) -- 40 -- ns Total Gate Charge QG -- 18 -- nC Gate-Source Charge QGS -- 2.5 -- nC Gate-Drain Charge QGD VDS=320V, ID=6.0A VGS=10V (Note 4, 5) -- 8.5 -- nC Drain-Source Diode Characteristics Drain-Source Diode Forward Voltage VSD VGS=0V,ISD=6.0A -- -- 1.5 V Continuous Drain-Source Current ISD -- -- 6.0 A Pulsed Drain-Source Current ISM -- -- 24.0 A Reverse Recovery Time tRR -- 250 -- ns Reverse Recovery Charge QRR ISD=6.0A, dISD/dt=100A/µs (Note 4) -- 2.0 -- µC BEIJING ESTEK ELECTRONICS CO.,LTD 2 |
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