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PJSOT05CFN3 bảng dữ liệu(PDF) 1 Page - Pan Jit International Inc.

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Giải thích chi tiết về linh kiện  E.S.D. Dual Protection Diode Array
PDF  3 Pages
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nhà sản xuất  PANJIT [Pan Jit International Inc.]
Trang chủ  http://www.panjit.com.tw
Logo PANJIT - Pan Jit International Inc.

PJSOT05CFN3 bảng dữ liệu(HTML) 1 Page - Pan Jit International Inc.

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PAGE . 1
REV.0.1-JUL.14.2009
PJSOT05CFN3
E.S.D. Dual Protection Diode Array
This Dual Unidirectional ESD Protector Array family have been designed to protect sensitive equipment against
ESD in high speed transmission buses, operating at 5V. This dual array offers an integrated solution to protect up
to 2 data lines in a unidirectional mode or, 1 data line in a bi-directional mode, in application where the board
space is a premium, in our DFN 3L package version.
FEATURES
• IEC61000-4-2 ESD 15kV air, 8kV Contact Compliance
• Low Leakage Current,Maximum of 0.5
A at rated voltage
• Maximum Capacitance of 10pF per device at 0Vdc 1MHz
• Peak Power Dissipation of 20W 8/20
s Waveform
• Pin to pin compatible with standard DFN 3L
• In compliance with EU RoHS 2002/95/EC directives
MECHANICAL DATA
• Case: DFN 3L, Molded Plastic
• Terminals: Solderable per MIL-STD-750, Method 2026
• Marking: AF
MAXIMUM RATINGS (Per Device)
Note : 1.Capacitance between pins 1 and 2 is half of the value, in a bi-directional configuration.
ELECTRAICAL CHARACTERISTICS (Per Device)TJ=25oC
0.042(1.05)
0.037(0.95)
0.013(0.32)
0.008(0.22)
0.014(0.36)
0.013(0.32)
0.008(0.22)
0.002(0.05) MAX.
DFN 3L
DFN 3L
Unit : inch(mm)
Unit : inch(mm)
Pa r a m e te r
Symbol
Value
Units
Peak Pulse Power (8/20
s Waveform)
PPP
20
W
Peak Pulse Current (8/20
s Waveform)
I PPM
2A
ESD Voltage (HBM Per MIL STD883C-Method 3015-6)
VESD
20
kV
Operating Temperature Range
TJ
-55 to +125
oC
Storage Temperature Range
TSTG
-55 to +150
oC
P a r a m e t e r
S ym b o l
Te s t Co nd itio n
M IN.
TYP.
M A X .
Unit s
Reve rs e S ta nd- O f f Volt ag e
V WRM
--
-
5 . 0
V
Re ve rs e B re a kd own Vo l ta g e
V BR
I BR=1 m A
6 .2
-
7 . 2
V
Re ve rs e Le aka g e C urr e nt
I R
V R=5 V
-
-
0 . 5
A
C lam p i ng Vo l tag e ( 8/20
s)
V C
I PP =2 A
-
-
1 0
V
O f f S ta te Junc ti on C a pac i t anc e
( Note 1)
C J
0V dc B i as f =1 M Hz
b et ween p i n 1, 2 to 3
(Gnd )
-9
1 0
p F
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
1
2
3
1
2
3


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