SOT89 PNP SILICON POWER

(SWITCHING) TRANSISTOR

ISSSUE 1 - DECEMBER 1998

FEATURES

*

2W POWER DISSIPATION

*

6A Peak Pulse Current

*

Excellent H

*

Extremely Low Saturation Voltage E.g. 16mv Typ.

*

Extremely Low Equivalent On-resistance;

R

Partmarking Detail -

718

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

VALUE

UNIT

Collector-Base Voltage

-20

V

Collector-Emitter Voltage

-20

V

Emitter-Base Voltage

-5

V

Peak Pulse Current **

-6

A

Continuous Collector Current

-2.5

A

Base Current

-500

mA

1 †

2 ‡

W

W

Operating and Storage Temperature Range

-55 to +150

°C

†

‡

Maximum power dissipation is calculated assuming that the device is mounted on FR4

substrate measuring 40x40x0.6mm and using comparable measurement methods adopted by

other suppliers.

**Measured under pulsed conditions. Pulse width=300

µs. Duty cycle ≤ 2%

Spice parameter data is available upon request for these devices

Refer to the handling instructions for soldering surface mount components.

C

B

C

E

FCX718