SOT89 NPN SILICON POWER

(SWITCHING) TRANSISTOR

ISSSUE 1 - NOVEMBER 1998

FEATURES

*

2W POWER DISSIPATION

*

10A Peak Pulse Current

*

Excellent H

*

Extremely Low Saturation Voltage

Complimentary Type -

FCX789A

Partmarking Detail -

688

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

VALUE

UNIT

Collector-Base Voltage

12

V

Collector-Emitter Voltage

12

V

Emitter-Base Voltage

5V

Peak Pulse Current **

10

A

Continuous Collector Current

3A

1 †

2 ‡

W

W

Operating and Storage Temperature Range

-55 to +150

°C

†

‡

Maximum power dissipation is calculated assuming that the device is mounted on FR4

substrate measuring 40x40x0.6mm and using comparable measurement methods adopted by

other suppliers.

**Measured under pulsed conditions. Pulse width=300

µs. Duty cycle ≤ 2%

Spice parameter data is available upon request for these devices

Refer to the handling instructions for soldering surface mount components.

C

B

C

E

FCX688B