G4435SS datasheet(1/6 Pages) DIODES

tên linh kiện	G4435SS

Giải thích chi tiết về linh kiện	P-CHANNEL ENHANCEMENT MODE MOSFET

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nhà sản xuất	DIODES [Diodes Incorporated]

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DMG4435SSS

Document number: DS32041 Rev. 2 - 2

1 of 6

www.diodes.com

March 2010

DMG4435SSS

P-CHANNEL ENHANCEMENT MODE MOSFET

Features

•

Low On-Resistance

•

Low Input Capacitance

•

Fast Switching Speed

•

Low Input/Output Leakage

•

Lead Free By Design/RoHS Compliant (Note 1)

•

"Green" Device (Note 2)

•

Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

•

Case: SO-8

•

Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

•

Moisture Sensitivity: Level 1 per J-STD-020

•

Terminal Connections: See Diagram Below

•

Marking Information: See Page 5

•

Ordering Information: See Page 5

•

Weight: 0.072 grams (approximate)

Maximum Ratings @TA = 25°C unless otherwise specified

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

VDSS

-30

V

Gate-Source Voltage

VGSS

±25

V

Continuous Drain Current (Note 3)

Steady State

(VGS = -4.5)

TA = 25°C

TA = 85°C

ID

-7.3

-4.7

A

Pulsed Drain Current (Note 4)

IDM

-80

A

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Power Dissipation (Note 3)

PD

1.3

W

Thermal Resistance, Junction to Ambient @TA = 25°C

RθJA

96.5

°C/W

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Notes:

1. No purposefully added lead.

2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

3. Device mounted on 1in. x 1in. FR-4 PCB with 2oz. Copper. The value in any given application depends on the user’s specific board design.

4. Repetitive rating, pulse width limited by junction temperature.

Top View

Internal Schematic

S

D

G

D

S

Mô tả tương tự - G4435SS

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