DMN2041LSD

Document number: DS31964 Rev. 2 - 2

1 of 6

www.diodes.com

October 2009

© Diodes Incorporated

DMN2041LSD

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features

•

Low On-Resistance

•

Low Gate Threshold Voltage

•

Low Input Capacitance

•

Fast Switching Speed

•

Low Input/Output Leakage

•

Lead Free By Design/RoHS Compliant (Note 1)

•

"Green" Device (Note 2)

•

Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

•

Case: SO-8

•

Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

•

Moisture Sensitivity: Level 1 per J-STD-020

•

Terminals Connections: See Diagram

•

Terminals: Finish - Matte Tin annealed over Copper lead frame.

Solderable per MIL-STD-202, Method 208

•

Marking Information: See Page 4

•

Ordering Information: See Page 4

•

Weight: 0.072 grams (approximate)

Characteristic

Symbol

Value

Units

Drain-Source Voltage

20

V

Gate-Source Voltage

±12

V

Drain Current (Note 3)

Steady

State

7.63

4.92

A

Pulsed Drain Current (Note 4)

30

A

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Total Power Dissipation (Note 3)

1.16

W

107.4

°C/W

Operating and Storage Temperature Range

-55 to +150

°C

Notes:

1. No purposefully added lead.

2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

3. Device mounted on FR-4 PCB with minimum recommended pad layout.

4. Repetitive rating, pulse width limited by function temperature.

SO-8

TOP VIEW

Internal Schematic

TOP VIEW

D

2

S

2

G

2

D

1

S

1

G

1

N-Channel MOSFET

N-Channel MOSFET

S1

D2

S2

D1

G2

G1

D1

D2

Please click here to visit our online spice models database.