DMN2040LTS datasheet(1/6 Pages) DIODES

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Giải thích chi tiết về linh kiện	DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

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DMN2040LTS

Document number: DS31941 Rev. 2 - 2

1 of 6

www.diodes.com

October 2009

DMN2040LTS

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features

•

Dual N-Channel MOSFET

•

Low On-Resistance

•

Low Gate Threshold Voltage

•

Low Input Capacitance

•

Fast Switching Speed

•

Low Input/Output Leakage

•

Lead Free By Design/RoHS Compliant (Note 1)

•

"Green" Device (Note 2)

•

Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

•

Case: TSSOP-8L

•

Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

•

Moisture Sensitivity: Level 1 per J-STD-020

•

Terminal Connections: See Diagram Below

•

Marking Information: See Page 4

•

Ordering Information: See Page 4

•

Weight: 0.039 grams (approximate)

Maximum Ratings @TA = 25°C unless otherwise specified

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

VDSS

20

V

Gate-Source Voltage

VGSS

±12

V

Continuous Drain Current (Note 3)

Steady

State

TA = 25°C

TA = 70°C

ID

6.7

4.9

A

Pulsed Drain Current (Note 4)

IDM

30

A

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Power Dissipation (Note 3)

PD

0.89

W

Thermal Resistance, Junction to Ambient @TA = 25°C

RθJA

140

°C/W

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Notes:

1. No purposefully added lead.

2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

3. Device mounted on FR-4 PCB with minimum recommended pad layout.

4. Repetitive rating, pulse width limited by junction temperature.

TOP VIEW

Internal Schematic

BOTTOM VIEW

Top View

Pin Configuration

8

7

6

5

1

2

3

4

D

S1

G1

D

S2

G2

G1

S1

S2

G2

D1

D2

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